Silicon carbide Schottky barrier diodes boost efficiency, switching performance

BOURNS 650V – 1200V Silicon Carbide (SiC) Schottky Barrier Diode (SBD) line consists of six models engineered to provide improved current carrying and thermal capabilities and high power density for increased performance and reliability. Devices feature low forward voltage (VF) and high thermal conductivity, which increases efficiency while lowering power dissipation, satisfying application requirements of 650V and 1200V solutions. Product series also has no reverse recovery current to reduce EMI, enabling these SiC SBDs to significantly lower energy losses. Devices offer designers various forward voltage, current and package options including TO220-2, TO247-3, TO252 and DFN8x8.

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