Mosfet, Schottky Barrier Diode Devices

Toshiba America Electronic Components Inc. has its line-up of MOSBD devices, which integrate a power MOSFET and a Schottky Barrier Diode onto a single die to save board space, increase power efficiency and reduce wiring resistance and inductance by eliminating external wiring between the MOSFET and the diode. The two MOSBDs are suited for high efficiency DC-DC converter applications in notebook PCs, portable devices, and other electronics where efficient power management is required. The devices are based on U-MOS V, the fifth-generation process technology in the Toshiba fast switching series, which enables lower on-state resistance for low-side MOSFETs, and faster switching for high-side MOSFETs.
www.toshiba.com/taec/