Electronic Products & Technology

February 29, 2020 by Stephen Law

6th Gen 650V SiC Schottky diodes boost efficiency, power density

RICHARDSON RFPD  Wolfspeed C6D family of 650V SiC Schottky diodes are based on firm’s robust 150mm SiC wafer technology and provide low forward voltage drop (VF = 1.27V @ 25°C) that delivers a significant impact on the reduction of conduction…
September 25, 2019 by Stephen Law

Schottky bridge rectifiers come in low profile BR DFN package

CENTRAL SEMICONDUCTOR CBRDFSH series of Schottky bridge rectifiers are available in 1.0A – 2.0A, 40V – 100V options. Devices are packaged in low profile BR DFN surface mount case and feature highly desirable energy efficiency. The full wave bridge devices utilize…
February 20, 2019 by Stephen Law

650V SiC Schottky diodes boost efficiency, reliability

LITTELFUSE LSIC2SD065CxxA and LSIC2SD065AxxA Series second-generation series of 650V, AEC-Q101-qualified silicon carbide (SiC) Schottky diodes are available with a choice of current ratings (6A, 8A, 10A, 16A or 20A). Devices provide a variety of performance advantages, including negligible reverse recovery…
February 17, 2019 by Stephen Law

Schottky rectifiers save space, increase power density

VISHAY INTERTECHNOLOGY TMBS Trench MOS Barrier Schottky surface-mount rectifiers include 15 1A, 2A, and 3A devices in the Esmp series low profile SMF (DO-219AB) package. Providing space-saving alternatives to Schottky rectifiers in SMA package, devices provide reverse voltages from 45V…
December 30, 2016 by Stephen Law

Schottky barrier diodes deliver low junction capacitances

SEMIGEN Schottky barrier diodes utilize various metal schemes to provide enhanced performance for low, medium and high barrier applications through 40GHz. Devices provide small junction capacitances, low I/F noise, low resistance and multi-junction chips for optimum performance. With forward voltage…