Electronic Products & Technology

Low-side gate driver delivers tailored turn-on/off timing

EP&T Magazine   

Electronics Semiconductors driver gate IGBT MOSFET semiconductor SiC

LITTELFUSE IX4352NE Low-side SiC MOSFET and IGBT Gate Driver is specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial applications. Device provides a separate 9A source and sink outputs, which enables tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator also provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. With an operating voltage range (VDD-VSS) of up to 35V, this driver offers exceptional flexibility and performance.

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