Electronic Products & Technology

November 19, 2018 by Stephen Law

100V half-bridge drivers safely drive MOSFETs for bidirectional controller

RENESAS ELECTRONICS ISL784x4 family of automotive-grade 100V, 4A half-bridge N-channel MOSFET drivers includes three devices: ISL78424 and ISL78444 with single tri-level PWM input for controlling both gate drivers and ISL78434, which has dual independent inputs that separately control the high-side…
October 10, 2018 by Stephen Law

Tiny S-class MOSFET relay boosts switching capacity, minimizes energy loss

HEILIND Omron G3VM-QR-S-VSON MOSFET class S relay’s compact footprint allows for high-density mounting, while its low ON resistance and CxR translate into minimal energy loss and exceptional signal integrity. Device provides high switching capacity and enhanced dielectric strength between I/O…
December 3, 2017 by Stephen Law

25V N-Channel power MOSFET lowers on-resistance, boosts power density

VISHAY Siliconix SiRA20DP 25 V n-channel TrenchFET Gen IV power MOSFET provides industry low maximum on-resistance of 0.58mΩ at 10V. Delivering increased efficiency and power density for a wide range of applications, device provides the lowest gate charge and gate…
October 30, 2017 by Stephen Law

P-channel zero threshold MOSFET enables sub-threshold circuits

ADVANCED LINEAR DEVICES ALD310700A/ALD310700 zero-gate threshold voltage EPAD P-Channel MOSFET Array provides low operating voltage of 0.2 Volt and current of less than one nano amp. Devices are intended for the development of small signal precision applications utilizing 0.00V Zero…
June 9, 2017 by Stephen Law

SiC Power MOSFET comes in four-lead TO 247-4 package

WOLFSPEED C3M0120100K silicon carbide power MOSFET provides 1000V, 120m-ohms, features C3M SiC MOSFET technology and is available in an optimized four-lead TO-247-4 package with a separate driver source pin. Device delivers 8mm of creepage distance between drain and source, high…
August 12, 2016 by Stephen Law

Voltage MOSFET minimizes total conduction losses

CENTRAL SEMICONDUCTOR UltraMOS energy efficient, high voltage MOSFET minimizes total conduction losses while maximizing power density. Device is a 6A, 800V MOSFET in the TO-220 package. The low rDS(on) of 0.8Ω and low total gate charge of 24.3nC are key…
April 29, 2016 by Stephen Law

Energy efficient MOSFETs expand to 800 volts

CENTRAL SEMICONDUCTOR CDM22012-800LRFP UltraMOS MOSFET is energy efficient, high voltage and minimizes total conduction losses while maximizing power density. Device is a 12A, 800V MOSFET in the TO-220FP (Full Pack) package. The low rDS(ON) of 0.37Ω and low total gate…