DALLAS, TX – Texas Instruments has introduced the industry’s first 35-V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) FETs.
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DALLAS, TX – Texas Instruments has introduced the industry’s first 35-V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) FETs.
