Low-loss silicon carbide (SiC) devices boost power efficiency

RENESAS RJS6005TDPP Schottky barrier diode (SBD) employs silicon carbide (SiC), and incorporates technology developed jointly by Hitachi Ltd., which contributes to achieving approximately 40% reduced low power consumption – delivering a reverse recovery time of 15 nanoseconds. Devices enable faster switching speed and reduce power loss by approximately 40%. Device has a voltage rating (forward voltage, VF) of only 1.5 volts (V), lower than that of existing Si fast trigger diode products.

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