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Voltage MOSFET minimizes total conduction losses


CENTRAL SEMICONDUCTOR UltraMOS energy efficient, high voltage MOSFET minimizes total conduction losses while maximizing power density. Device is a 6A, 800V MOSFET in the TO-220 package. The low rDS(on) of 0.8Ω and low total gate charge of 24.3nC are key energy efficiency characteristics of this device, which surpasses the operational performance of similarly rated standard MOSFETs. Device delivers high speed operational benefits for phase shift compensation in Power Factor Correction (PFC) applications. http://www.centralsemi.com/ultramos

16SPD260_ROB


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