Ready-to-use, 600V GaN FET power stages supports up to 10kW
TEXAS INSTRUMENTS LMG341x portfolio of ready-to-use, 600V gallium nitride (GaN), 50mΩ and 70mΩ power stages support applications up to 10kW. Product family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs). Devices provide a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies. With integrated <100-ns current limiting and overtemperature detection, devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.
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