Electronic Products & Technology

MOSFETs reduce the effects of gate loop inductance

Stephen Law   


VISHAY INTERTECHNOLOGY Siliconix SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E 600 VE Series power MOSFETs in compact PowerPAK 8×8 package provide a large drain terminal for low thermal resistance and a Kelvin source connection that can increase efficiency by improving the gate drive signal. The low-profile, surface-mount devices are RoHS-compliant, halogen-free and 100% lead (Pb)-free, providing a space-saving alternative to conventional TO-220 and TO-263 solutions. Devices provide low on-resistance down to 0.135O at 10V, ultra-low gate charge down to 31nC and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. http://www.vishay.com 15NDD228_PS2


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