Integrated AMR replaces reed switches, hall effect sensors

TAIWAN SEMICONDUCTOR TSHA2101 fully integrated Anisotropic Magneto Resistance (AMR) sensor replaces reed switches and hall effect sensors in industrial applications. Device is an integrated system-on-chip (SIP) requiring little to no added circuitry. Its omni-polar design automatically detects a horizontal magnetic field of either polarity. When positioned to detect a magnet located on a linear or rotational element, device acts as a non-contact switch with low power consumption, high sensitivity and high reliability.  As a replacement for traditional mechanical reed switches, product delivers faster response time, improved durability and resistance to wear and degradation over time.

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