GaN driver IC drives LV, MV and HV e-mode GaN HEMTs

INNOSCIENCE TECHNOLOGY INS1001DE GaN driver IC is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications. Device is matched to optimize the performance of e-mode GaN HEMTs and firm’s e-mode InnoGaN, making it suitable for high power, high frequency, and robust power GaN applications. The new gate driver has dual non-inverting and inverting PWM inputs, enabling flexible operation with controller, opto-coupler and digital isolator. Independent Pull-up and Pull-down outputs facilitate the control of turn-on and turn-off speeds. Driver voltage is user-programmable to suit different gate requirements using an external resistor divider. An integrated 5V LDO is included to supply digital isolator or other circuitry in high-side applications. Featuring a wide 6V to 20V operating voltage range and with a strong 1.3Ω Pull-up and 0.5Ω Pull-down resistance, product is available in thermally-enhanced DFN3x3-10L package.

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