Hotswap ASFET doubles SOA improvement

NEXPERIA PSMNR67-30YLE ASFET delivers 2.2x stronger SOA (12V @100mS) than previous technologies while having an R_DS(on) (max) as low as 0.7mΩ. The Spirito effect (represented by the steeper downward slope found on SOA curves at higher voltages) has been eliminated, while exceptional performance is maintained across the full voltage and temperature range (compared to unoptimized devices). Product removes the need to thermally de-rate designs, by fully characterizing devices at 125°C and providing hot SOA datasheet curves. With eight new devices (three 25V and five 30V) available in a choice of LFPAK56 & LFPAK56E packages with R_DS(on) ranging from 0.7mΩ to 2mΩ, the majority of hotswap and soft start applications are addressed. Two additional 25V products (which have an even lower R_DS(on) of 0.5 mΩ) are planned for release over the coming months.

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