Hotswap ASFET doubles SOA improvement
Stephen LawElectronics Semiconductors ASFET MOSFET semiconductor
NEXPERIA PSMNR67-30YLE ASFET delivers 2.2x stronger SOA (12V @100mS) than previous technologies while having an RDS(on) (max) as low as 0.7mΩ. The Spirito effect (represented by the steeper downward slope found on SOA curves at higher voltages) has been eliminated, while exceptional performance is maintained across the full voltage and temperature range (compared to unoptimized devices). Product removes the need to thermally de-rate designs, by fully characterizing devices at 125°C and providing hot SOA datasheet curves. With eight new devices (three 25V and five 30V) available in a choice of LFPAK56 & LFPAK56E packages with RDS(on) ranging from 0.7mΩ to 2mΩ, the majority of hotswap and soft start applications are addressed. Two additional 25V products (which have an even lower RDS(on) of 0.5 mΩ) are planned for release over the coming months.
Print this page