eGaN ICs combine gate drivers with GaN FETs to improve efficiency
EFFICIENT POWER CONVERSION EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. EPC2112 is a 200 V, 40-mΩ eGaN FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die. The monolithic ICs improve efficiency, save space, and lower costs compared to silicon-based solutions.
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