100W GaN HEMT power tansistors boost high frequency performance

CREE High efficiency X-Band, fully matched GaN HEMT transistors for commercial radar and satellite communications applications are rated at 50W and 100W. Devices deliver “improvements in efficiency and performance when compared to existing GaAs MESFET transistors or Traveling Wave Tube (TWT) based amplifiers. Product family consists of four devices; two for satellite communications (CGHV96050F1 and CGH96100F1) and two for commercial radar applications (CGHV96050F2 and CGHV96100F2). All four transistors are offered in a small footprint (0.9 x 0.7”) package.

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