IGBT targets high frequency
Utilizing a 5th generation CSTBT (carrier stored trench gate bipolar transistor) chip, the NFH-series IGBT is available in the low inductance U-series package, providing minimized internal package inductance which is imperative when operating at high frequency.?
Each NFH-series IGBT module consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Rating options include 600V duals from 100A to 600A and 1200V duals from 100A to 600A. The on state loss VCE(sat) vs. the turn-off switching loss ESW(off) has been optimized to provide the lowest loss at 35kHZ for hard switching applications and at 70kHZ for soft switching applications.