Silicon carbide Schottky diodes push performance envelope

ROHM SEMICONDUCTOR SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) provides low forward voltage and speeds recovery time, improving power conversion efficiency. Device maintains low forward voltage over a wide operating temperature range, which results in lower power dissipation under actual operating conditions. Low VF reduces conduction loss while the ultra-short reverse recovery time (15 ns, typical) enables high-speed switching and minimizes switching loss.

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