Electronic Products & Technology

Silicon carbide Schottky diodes push performance envelope

EP&T Magazine   


ROHM SEMICONDUCTOR SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) provides low forward voltage and speeds recovery time, improving power conversion efficiency. Device maintains low forward voltage over a wide operating temperature range, which results in lower power dissipation under actual operating conditions. Low VF reduces conduction loss while the ultra-short reverse recovery time (15 ns, typical) enables high-speed switching and minimizes switching loss.



Stories continue below

Print this page

Related Stories