Silicon carbide power MOSFET offered as SPICE Model

CREE SiC Z-FET SiC MOSFET power devices with a fully-qualified SPICE model achieves a higher level of efficiency than conventional silicon power switching devices for comparably-rated devices. Devices have different characteristics than silicon devices and therefore require a SiC-specific model for accurate circuit simulations. Product is capable of delivering switching frequencies that are up to 10 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

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