CREE SiC Z-FET MOSFET power devices in bare die or chip form are used in advanced power electronics circuits to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices. Product is available in two versions: CPMF-1200-S080B measures 4.08mm x 4.08mm and is rated at 1200V/20A with a nominal on-resistance (Rds(on)) of 80mO; and CPMF-1200-S160B measures 3.1mm x 3.1mm and is rated at 1200V/10A with a nominal on-resistance (Rds(on)) of 160mO. Operating junction temperature for both devices is rated at -55C to +135C.
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