Electronic Products & Technology

SiC Schottky diode reduces switching losses, increases efficiency

March 2, 2018  Stephen Law

LITTELFUSE LSIC2SD120A08 Series, LSIC2SD120A15 Series, and LSIC2SD120A20 series of 1200V silicon carbide (SiC) Schottky Diodes offer current ratings of 8A, 15A ,20A, respectively and are provided in the popular TO-220-2L package. LSIC2SD120C08 Series provides a current rating of 8A in a TO-252-2L package. The merged p-n Schottky (MPS) device architecture of the GEN2 SiC Schottky Diodes enhances surge capability and reduces leakage current. Replacing standard silicon bipolar power diodes with the new GEN2 SiC Schottky Diodes allows circuit designers to reduce switching losses dramatically, accommodate large surge currents without thermal runaway and operate at junction temperatures as high as 175°C.

Power Semiconductor Silicon Carbide image


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