INTERNATIONAL RECTIFIER R8 logic level power MOSFETs utilize Trench technology to provide extremely low on-state resistance (RDS(on)) of 12 milliohms (typical) and total gate charge (QG) of 18nC (typical), increasing efficiency performance by up to 6% compared to existing solutions. Model IRHLNM87Y20SCS has a BVDSS rating of 20V and a maximum drain current (ID) rating of 17A. Devices are available in firm’s SMD 0.2 surface-mount style package, achieving a 50% space saving compared to the existing SMD 0.5 package solution.
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