Power stage FETs boost energy in smaller spaces

TEXAS INSTRUMENTS LMG2100R044 and LMG3100R017 100V half-bridge GaN power stage FETs can reduce power-supply solution size for mid-voltage applications by more than 40% and achieve industry-leading power density of over 1.5kW/in3, enabled by GaN technology’s higher switching frequencies. Product portfolio also reduces switching power losses by 50% compared to silicon-based solutions, while achieving 98% or higher system efficiency given the lower output capacitance and lower gate-drive losses. In a solar inverter system, for example, higher density and efficiency enables the same panel to store and produce more power while decreasing the size of the overall micro-inverter system.

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