High-performance power modules in half-bridge packages
EP&T MagazineElectronics MOSFETs power SEMIQ SiC silicon carbide
SEMIQ QSiC series of 1200V silicon-carbide (SiC) power MOSFETs in half-bridge packages are engineered and tested to operate reliably in demanding environments. The compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses. Featuring high breakdown voltage (>1400V), the modules support high-temperature operation (Tj = 175°C) with low Rds(On) shift over the full temperature range. Devices exhibit industry-leading gate oxide stability and long gate oxide lifetime, avalanche unclamped inductive switching (UIS) ruggedness and long short-circuit withstand time. With a solid foundation of high-performance ceramics, the new SiC modules are suitable for EV charging, on-board chargers (OBCs), dc-dc converters, E-compressors, fuel cell converters, medical power supplies, photovoltaic inverters, energy storage systems, solar and wind energy systems, data center power supplies, UPS/PFC circuits, Vienna rectifiers, and other automotive and industrial applications.