GaN FETs serve soft switching applications with high standards of efficiency
EP&T MagazineSemiconductors Central efficiency FETS GaN semiconductor standards
CENTRAL SEMICONDUCTOR CCSPG1060N (100V, 60A) in a CSP3.5X2 package; CDF56G6511N (650V, 11.5A) Gallium Nitride (GaN) FETs in a DFN5X6A package, and the CDF56G6517N (650V, 17A) in a DN5X6A package serve soft switching applications with high standards of efficiency. Additional devices in this line are available on demand, as well as the option for bare die configurations. FETs are engineered for maximum efficiency and speed, while providing space-saving with a high voltage threshold of up to 650V, coupled with low gate charge and rDS(ON) as low as 3.2mΩ, promising performance and reliability. Devices are suitable for a wide range of applications, including wireless charging in sectors such as defense, aerospace, healthcare, and consumer electronics.