GaAs RF driver amps boost linearity for 3G/4G base stations

TRIQUINT TQP7M9105 and TQP7M9106 packaged 1W and 2W gallium arsenide (GaAs) RF driver amplifiers provide best-in-class linearity, low power consumption and advanced protection for CDMA, WCDMA and LTE base station or similar applications. Devices are broadband and rugged, boosting performance across an operating range of 50 to 1500MHz. Products deliver 1W (+30dBm) of RF output power at 1dB gain compression (P1dB) and 19.4dB of gain, and an Output Third-Order Intercept Point (OIP3) of 49dBm, matching the highest linearity in its class, while consuming only 220mA from its single +5V supply.

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