Efficient 1200V SiC modules come in compact E1B package

QORVO Four 1200V silicon carbide (SiC) modules – two half-bridge and two full-bridge – come in a compact E1B package with RDS(on) starting at 9.4mΩ. The efficient SiC modules are suitable solutions for electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power applications. Modules can replace as many as four discrete SiC FETs, thus simplifying thermomechanical design as well as assembly. Firm’s cascode technology allows higher switching frequency operation, further reducing solution size by using smaller external components. Silver-sinter die attach reduces thermal resistance to as low as 0.23 °C/W; when combined with the stacked die construction found in the “SC” part numbers, power cycling performance is improved by 2X over comparable SiC power modules on the market.

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