INTERNATIONAL RECTIFIER IRFHE4250D FastIRFET dual power MOSFET reduces power losses by more than 5% at 25A compared to best-in-class conventional power block devices. The 25V device is targeted at 12V input dc-dc synchronous buck applications Device provides firm’s latest generation silicon and expands the power block packaging platform with a 6×6 PQFN package with exposed top and slim profile for back-side mounting that combined with excellent thermal performance, low on-state resistance (RDS(on)) and gate charge (Qg) delivers superior power density and lower switching losses to shrink pcb size and improve overall system efficiency.
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