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Daughterboard kit evaluates GaN transistor performance


GAN SYSTEMS Daughterboard style evaluation kit helps power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard (GS665MB-EVB). Family of four daughterboards ranging from 750W to 2,500W consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and an optional heatsink to form a high performance half bridge power stage. http://www.gansystems.com


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