Electronic Products & Technology

Bidirectional VGaN HEMT saves up to 64% space, reduces heat generated

Stephen Law   

Electronics Semiconductors HEMT semiconductor

INNOSCIENCE TECHNOLOGY INN040W048A GaN-on-Silicon e-mode HEMT features a bi-directional blocking capability and ultra-low On Resistance. With no body diodes and low conduction resistance, this chip is being used by Oppo, RealMe and now OnePlus to replace two silicon MOSFETs that are conventionally required by a phone’s protection circuitry. Device saves up to 64% space in the design, and reduces the heat generated during charging – by 85% in peak power heating – resulting in faster charging. Device features GaN-on-Silicon E-mode HEMT technology.

click here for more info


Stories continue below

Print this page

Related Stories