Bidirectional VGaN HEMT saves up to 64% space, reduces heat generated

INNOSCIENCE TECHNOLOGY INN040W048A GaN-on-Silicon e-mode HEMT features a bi-directional blocking capability and ultra-low On Resistance. With no body diodes and low conduction resistance, this chip is being used by Oppo, RealMe and now OnePlus to replace two silicon MOSFETs that are conventionally required by a phone’s protection circuitry. Device saves up to 64% space in the design, and reduces the heat generated during charging – by 85% in peak power heating – resulting in faster charging. Device features GaN-on-Silicon E-mode HEMT technology.

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