650V Silicon Carbide diodes deliver maximum robustness, efficiency

NEXPERIA PSC1065K 650 V Silicon Carbide (SiC) Schottky diode is designed for power applications which require ultra-high performance, low loss, and high efficiency. The 10 A, 650V SiC Schottky diode is an industrial-grade part that addresses the challenges of demanding high voltage and high current applications. Device boosts performance with temperature-independent capacitive switching and zero recovery behavior culminating in an outstanding figure-of-merit (QC x VF). Product’s improved switching performance is almost entirely independent of current and switching speed variations. The merged PiN Schottky (MPS) structure of the device provides additional benefits, such as outstanding robustness against surge currents that eliminates the need for additional protection circuitry.

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