50V Broadband GaN HEMT boosts performance

CREE CGHV40050 50V gallium nitride (GaN) high electron mobility transistors (HEMTs) with 50W packaged part provides high performance broadband solutions for a variety of RF and microwave applications up to 4GHz. Available in two-leaded flange and pill packages, device exhibits high efficiency, high gain, and wide bandwidth performance, all of which can be demonstrated using the a 0.8–2.0GHz high power amplifier (HPA) reference design. Device delivers 50W typical output power up to 4GHz operation and typically provides 17.5dB small signal gain at 1.8GHz and 55% efficiency at PSAT.

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