RF Micro Devices, Inc, a designer and manufacturer of high-performance semiconductor components, has expanded the Company’s RF component portfolio to include four new high isolation broadband switches: the RF3021, RF3023, RF3024 and RF3025. Each of the symmetric RF switches is designed to operate in multiple market segments, including cellular infrastructure, WiFi, WiMAX and antenna tuning applications for mobile devices.
The four new RF switches utilize RFMD’s Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology, enabling very high performance. The operating frequency band of RFMD’s high isolation broadband switches is wider than other high isolation switches (typically 6 GHz versus 3.5 GHz), while maintaining low insertion loss and high isolation. Additionally, each switch features an on-chip driver that enables a single voltage control line. RFMD’s high isolation broadband switches are packaged in cost-effective plastic packages, compared to metal hermetic packages or in die form.
The RF3021 and RF3025 are symmetric single-pole, double-throw (SPDT) switches featuring very high isolation and single-bit control. The RF3025 is an absorptive switch that features a 50 ohm termination in the off-state. The RF3023 and RF3024 symmetric SPDT switches feature low insertion loss and moderate isolation, making them excellent for general purpose switching applications. The RF3021 and RF3025 are housed in a 16-pin 3×3 mm QFN package, while the RF3023 and RF3024 are in a 6-lead SC70 package.