1200V SiC diode boosts switching performance

FAIRCHILD FFSH40120ADN 1200V silicon carbide (SiC) diode combines improved switching performance, higher reliability and low electromagnetic interference (EMI). Device improves leakage current performance in its class, leaking far less current than its competitors at temperatures up to 175 Celsius. Device is extremely fast switching and no reverse recovery current, which dramatically reduces switching losses compared to silicon and results in superior energy efficiency. Faster switching allows OEMs to reduce design sizes, including magnetic coils and associated passive components. http://www.fairchild.com