Trench-based low forward voltage Schottky rectifiers boost switching efficiency

ON SEMICONDUCTORS NTST30100CTG, NTST20100CTG and NTSB20U100CTG family of 100V trench-based low forward voltage Schottky rectifiers (LVFR) utilize a trench topology that enables low forward voltage drop and reduced leakage current. This results in low conduction losses and a substantial improvement in circuit efficiency. Product family utilizes a trench MOS structure that enables an enhanced conduction zone under forward bias, resulting in significant reduction in forward voltage drop. Under reverse bias, this structure creates a ‘pinch-off’ effect resulting in reduced leakage current. Unlike planar Schottky rectifiers, the LVFR’s switching performance is strong across their entire operating junction temperature range of -40C to +150C.

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