SiGe rectifiers combine efficiency, thermal stability, space-savings
NEXPERIA PMEGxGxELR/P silicon germanium (SiGe) rectifiers with 120 V, 150 V, and 200 V reverse voltages combine the high efficiency of their Schottky counterparts with the thermal stability of fast recovery diodes. Targeting automotive, communications infrastructure and server markets, the 1-3 A devices are of particular benefit in high-temperature applications like LED lighting, engine control units or fuel injection. The low leakage devices provide an extended safe-operating area with no thermal runaway up to 175 degrees. Devices can optimize design for higher efficiency which is not feasible using fast recovery diodes commonly used in such high-temperature designs. By boosting a low forward voltage (Vf) and low Qrr, the SiGe rectifiers have an advantage of 10-20 % lower conduction losses.