Electronic Products & Technology

Power GaN FETs reduce component count, shrink form factor

Stephen Law   

Electronics Power Supply / Management Semiconductors FET GaN power semiconductor

NEXPERIA Second-generation 650V power GaN FET device provides RDS(on) performance down to 35mΩ (typical), and target single phase ac-dc and dc-dc industrial switched mode power supplies (SMPS), ranging from 2kW to 10kW, especially server and telecoms supplies that must meet 80 PLUS® Titanium efficiency regulations. Devices are also suitable for solar inverters and servo drives in the same power range. Available in TO-247 packaging, devices deliver a 36% shrinkage in die size for a given RDS(on) value, for better stability and efficiency. The cascode configuration eliminates the need for complicated drivers, speeding time to market. Devices deliver improved performance in both hard-switching and soft-switching configurations, offering designers maximum flexibility.

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