CALIFORNIA EASTERN LABS NESG4030M14 heterojunction bipolar transistor (HBT) at 5.8GHz delivers low-noise 11dB of gain at a low 2V/6mA bias, making it suitable for battery-powered, 802.11a mobile Wi-Fi applications. Fabricated using firms 140GHz fMAX UHS4 SiGe:C process, device also provides 80V (MM) of onboard ESD protection. Product is housed in a miniature, RoHS-compliant M14 package.
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