1200V SiC modules advance energy standards
EP&T MagazineElectronics Semiconductors MOSFETs semiconductor SEMIQ silicon carbide
SEMIQ QSiC family of Silicon Carbide modules includes 1200V MOSFETs that pairs with or without 1200V SiC Schottky Diodes in a SOT-227 package. Crafted from high-performance ceramics and rigorously engineered to function with reliability in challenging conditions, modules boost performance, which empowers higher power densities and more streamlined design configurations. Devices feature high breakdown voltage (> 1400V), high-temperature operation (Tj = 175°C), and low Rds(On) shift over the full operating temperature range while providing industry-leading gate oxide stability and gate oxide lifetime, avalanche (UIS) ruggedness and extended short-circuit withstand times. Target markets include EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data center power supplies, UPS/PFC circuits, and other automotive and industrial power applications.