1200V GaN-on-sapphire device serves next gen car, 3-phase power systems

TRANSPHORM TP120H070WS FET is a 1200 V GaN-on-Sapphire power semiconductor supports future automotive power systems, as well as three-phase power systems typically used in the broad industrial, datacom, and renewables markets. These applications benefit from the device’s higher power density and reliability along with equal or better performance at more reasonable cost points versus alternative technologies. Device achieved 98.7% efficiency, exceeding that of a similarly rated production SiC MOSFET. Device specifications include: 70 mΩ RDS(on); Normally off; Efficient bidirectional current flow; ± 20 Vmax gate robustness; Low 4Vth gate drive noise immunity; Zero QRR; 3-lead TO-247 package.

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