Electronic Products & Technology

News

SILICON-GERMANIUM CARBON BASED RF TRANSISTORS

Infineon Technologies AG has unveiled its SiGe:C (Silicon-Germanium Carbon) process technology for high-performance radio frequency (RF) semiconductor devices.


The SiGe:C technology is the foundation for Infineon’s latest generation of Heterojunction Bipolar Transistors (HBTs), which provide low noise figures in silicon-based discrete transistors of 0.75 dB at 6 GHz and high gain of up to 19 dB at 6 GHz.
infineon.com


Print this page


Related


Have your say:

Your email address will not be published. Required fields are marked *

*