Four Gigabit LPDDR3 Mobile DRAM uses 20nm-class technology

SAMSUNG ELECTRONICS LPDDR3 ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM is being produced at a 20 nanometer class process node. Device enables performance levels comparable to the standard DRAM utilized in personal computers. Device can transmit data at up to 2,133 megabits per second (Mbps) per pin, which is more than double the performance of the preceding memory standard mobile DRAM (LPDDR2) with a data transmission speed of 800Mbps.

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