Electronic Products & Technology



Product
March 12, 2019 by Stephen Law

GaN power transistors boost performance

GAN SYSTEMS GS-065 low current (3.5A to 11A) transistor line leverages firm’s technology leadership in 650V enhancement mode GaN HEMTs. Devices are packaged in thermally efficient, low cost PDFN packages with small 5.0 x 6.0 mm footprint. Device ratings are 3.5 A, 8 A,…
News
August 23, 2018 by EP&T Magazine

German researchers develop single-atom transistor

German researchers have developed a single-atom transistor, considered the smallest transistor worldwide. Physicist Professor Thomas Schimmel and his team at the Karlsruhe Institute of Technology (KIT) in Karlsruhe, Germany discovered that this quantum electronics component switches an electrical current by…
Product
June 10, 2018 by Stephen Law

Fully-matched, 5-6 GHz RF power transistor delivers 25W

INTEGRA TECHNOLOGIES IGT5259CW25 fully-matched, gallium nitride on silicon carbide (GaN/SiC), RF power transistor is suitable for C-band, continuous wave (CW) applications. Device is fully matched to 50-ohms, operates at the instantaneous frequency range 5.2 – 5.9GHz and provides a minimum…
Product
May 27, 2018 by Stephen Law

Fully-matched, 5-6 GHz RF power transistor delivers 25W of power

INTEGRA TECHNOLOGIES IGT5259CW25 fully-matched, gallium nitride on silicon carbide (GaN/SiC), RF power transistor that is ideal for C-band, continuous wave (CW) applications. Device is fully matched to 50-ohms, operates at the instantaneous frequency range 5.2 – 5.9GHz, and delivers a…
Product
February 9, 2018 by Stephen Law

Fully-matched high-power GaN/SiC transistor delivers 50W at 5-6GHz

INTEGRA TECHNOLOGIES IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and supplies 50W of peak pulsed output power at 50V drain bias. Product covers the frequency range 5.2-5.9GHz with instantaneous response and provides 14dB of gain and 43%…