Wafer-level 12 & 30V MOSFETs boost efficiency
Stephen LawElectronics Semiconductors MOFSET semiconductor
NEXPERIA PMCB60XN and PMCB60XNE 30V N-channel small-signal trench MOSFETs boost RDS(on) in an ultra-compact wafer-level DSN1006 package, to make energy go further where space is tight and battery runtime is critical. Devices minimize energy losses and increase efficiency in load switching and battery management. Product’s performance also reduces self-heating thereby enhancing user comfort in wearable devices. Products have maximum RDS(on) of 50mΩ and 55mΩ respectively, at VGS = 4.5V. PMCB60XNE comes with ESD protection rated to 2kV (human body model – HBM) integrated in the 1.0mm × 0.6mm × 0.2mm DSN1006 outline. Both MOSFETs are rated for drain current up to 4A.