Trench-gate field-stop technology IGBTs lower conduction, switching loss

BOURNS Model BID Series discrete insulated-gate bipolar transistor (IGBT) delivers an efficiency of 600V/650V co-packaged with a fast recovery diode (FRD). Designed using advanced trench-gate field-stop technology that provides greater control of dynamic characteristics, the five IGBTs deliver lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses compared to previous generation non-punch-through IGBTs. In addition, this structure provides a positive temperature coefficient that helps increase device longevity and reduce power requirements in high voltage and high current designs. Devices are available in thermally-efficient TO-252, TO-247 and TO-247N packages, and can provide a lower thermal resistance Rth(j-c), making them suitable for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), induction heating and power factor correction (PFC) applications. Devices come in four voltage/current model options in 600V/5A, 600V/20 , 600V/30A and 650V/50A.

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