Silicon carbide schottky rectifiers come in bare die
CENTRAL SEMICONDUCTOR Silicon Carbide Schottky Rectifier die portfolio is optimized for high temperature applications. Devices are available in both 650V and 1200V, with a current range of 4A to 30A for 650V devices and 2A and 50A for 1,200V devices. The primary benefits of Silicon Carbide (SiC) over silicon (Si) are stable switching performance over temperature extremes and high levels of energy efficiency. Theoretically, SiC die can operate at junction temperatures greater than 600°C, well above the package device rating. Devices provide improved energy efficiency as a result of low total conduction losses, and minimal electrical characteristic changes over a wide temperature range. Products are suitable for power inverters, industrial motor drives, switch-mode power supplies, power factor correction (PFC), and over-current protection.