Silicon carbide MOSFET boosts bandgap for high-performance charging
ON SEMICONDUCTOR Pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. Devices are based upon planar technology and suited to a drive voltage in the range of 18-20 V, are simple to drive with negative gate voltages. The larger die reduces thermal resistance compared to trench MOSFETs, thereby reducing die temperature at the same operating temperature. Configured as a 2-PACK half bridge, the NXH010P120MNF is a 10 mohm device housed in an F1 package while the NXH006P120MNF2 is a 6 mohm device in an F2 package. The packages feature press-fit pins making them ideal for industrial applications and an embedded negative temperature coefficient (NTC) thermistor facilitates temperature monitoring.