SiC Power MOSFET comes in four-lead TO 247-4 package

WOLFSPEED C3M0120100K silicon carbide power MOSFET provides 1000V, 120m-ohms, features C3M SiC MOSFET technology and is available in an optimized four-lead TO-247-4 package with a separate driver source pin. Device delivers 8mm of creepage distance between drain and source, high blocking voltage with low on-resistance, high-speed switching with low capacitances and fast intrinsic diode with low reverse recovery (Qrr).