Electronic Products & Technology

SiC JFETs lower switching losses

EP&T Magazine   


SEMISOUTH LABS SJDP120R340 normally on SiC trench JFET enables higher switching speeds and substantially lower losses when compared with silicon MOSFETs. Device is rated at 1200V with a maximum on-state resistance of 340 m? (typical RDS,on of 270 m?), and provides a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150C.



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