SiC JFETs lower switching losses

SEMISOUTH LABS SJDP120R340 normally on SiC trench JFET enables higher switching speeds and substantially lower losses when compared with silicon MOSFETs. Device is rated at 1200V with a maximum on-state resistance of 340 m? (typical RDS,on of 270 m?), and provides a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150C.

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