X-FAB Silicon Foundries and Attopsemi introduce the latest version of Attopsemi‘s I-fuse IP with next gen architecture demonstrated on X-FAB’s XH018 180 nm process technology. Device is available in different memory densities, ranging from 512 bits to 8 KBytes. The IP is at least 50% less compared to previous versions, without trading off program window range, program voltage and any of the numerous other benefits associated with the original. This enables a dramatic reduction in OTP footprint, as well as a decrease in peak and average current consumption by between 1/3 and 1/2, while still keeping to a 3.3 V standard I/O voltage for programming. The incorporation of I-fuse into XH018 will extend the reach of this process into various industrial, medical and consumer applications where 3.3V operation coupled with compact and cost-effective dies are called for.
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