RF power transistors enable smaller, lighter weight 5G radios
NXP SEMICONDUCTORS RF power discrete transistors for 32T32R active antenna systems, uses firm’s latest proprietary gallium nitride (GaN) technology. Product series complements firm’s portfolio of discrete GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3 to 4.0 GHz. 32T32R solutions deliver twice the power in the same package as its 64T64R solutions, resulting in a smaller and lighter overall 5G connectivity solution. This pin-compatibility enables network operators to scale rapidly across frequency and power levels. Series of GaN discrete solutions are designed for 10W average power at the antenna, targeting 320W radio units, with up to 58% of drain efficiency.